Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode - Physical Chemistry Chemical Physics (RSC Publishing)
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Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells | HTML
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1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates: Applied Physics Letters: Vol 111, No 3
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Figure 1 from Room-Temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure | Semantic Scholar
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Schematic view of the 1550 nm AlInGaAs multiple quantum well (MQW) DM... | Download Scientific Diagram
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Study of Influence of Geometrical Structure Parameters of INGAN Single Quantum Well Laser on Time Response and Power-Current Characteristics by Solving Rate Equations | Semantic Scholar
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