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Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode
Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode

Improved JBS structure to reduce the leakage current and increase the surge  current capability | Toshiba Electronic Devices & Storage Corporation |  Americas – United States
Improved JBS structure to reduce the leakage current and increase the surge current capability | Toshiba Electronic Devices & Storage Corporation | Americas – United States

Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical  Articles
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles

Basic unit cell of a MPS diode | Download Scientific Diagram
Basic unit cell of a MPS diode | Download Scientific Diagram

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N  Schottky Diodes | HTML
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML

Advantages of the 1200 V SiC Schottky Diode with MPS Design
Advantages of the 1200 V SiC Schottky Diode with MPS Design

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N  Schottky Diodes | HTML
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML

Energies | Free Full-Text | Promise and Challenges of High-Voltage SiC  Bipolar Power Devices | HTML
Energies | Free Full-Text | Promise and Challenges of High-Voltage SiC Bipolar Power Devices | HTML

Improved JBS structure to reduce the leakage current and increase the surge  current capability | Toshiba Electronic Devices & Storage Corporation |  Asia-English
Improved JBS structure to reduce the leakage current and increase the surge current capability | Toshiba Electronic Devices & Storage Corporation | Asia-English

The Wolfspeed MPS Diode Advantage - YouTube
The Wolfspeed MPS Diode Advantage - YouTube

Design and Optimization of Silicon Carbide Schottky Diodes - Power  Electronics News
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News

Design and Optimization of Silicon Carbide Schottky Diodes - Power  Electronics News
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News

Device Design Assessment of GaN Merged P-i-N Schottky Diodes
Device Design Assessment of GaN Merged P-i-N Schottky Diodes

1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability

Figure 1 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar  Operation | Semantic Scholar
Figure 1 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar

SiC Schottky Diode Device Design: Characterizing Performance & Reliability
SiC Schottky Diode Device Design: Characterizing Performance & Reliability

Figure 2 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar  Operation | Semantic Scholar
Figure 2 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar

Avalanche Ruggedness of SiC MPS Diodes Under Repetitive  Unclamped-Inductive-Switching Stress - Technical Articles
Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress - Technical Articles

Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode  model - Li - 2020 - IET Power Electronics - Wiley Online Library
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library

Ruggedness of 1200 V SiC MPS diodes - ScienceDirect
Ruggedness of 1200 V SiC MPS diodes - ScienceDirect

Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... |  Download Scientific Diagram
Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram

Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode  model - Li - 2020 - IET Power Electronics - Wiley Online Library
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library

Junction barrier Schottky diode (JBS) and merged PiN Schottky diode... |  Download Scientific Diagram
Junction barrier Schottky diode (JBS) and merged PiN Schottky diode... | Download Scientific Diagram

Reverse Characteristic Model of SiC MPS Diode | SpringerLink
Reverse Characteristic Model of SiC MPS Diode | SpringerLink

GC20MPS12-247 - Genesic Semiconductor - Silicon Carbide Schottky Diode, MPS  Series, Single
GC20MPS12-247 - Genesic Semiconductor - Silicon Carbide Schottky Diode, MPS Series, Single

Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS  diodes | SpringerLink
Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes | SpringerLink

4.4.3.1 MPS Diode Structure
4.4.3.1 MPS Diode Structure

Advantages of the 1200V SiC Schottky Diode with MPS Design - Electronics  Maker
Advantages of the 1200V SiC Schottky Diode with MPS Design - Electronics Maker

Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser

Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS  diodes for optimizing the forward characteristics | Semantic Scholar
Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics | Semantic Scholar