Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al 2 O 3 - RSC Advances (RSC Publishing) DOI:10.1039/C6RA27190A
The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes | Semantic Scholar
Interface Trap - an overview | ScienceDirect Topics
Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode | SpringerLink
Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency | Nanoscale Research Letters | Full Text
Extraction of interface trap density by analyzing organohalide perovskite and metal contacts using device simulation: AIP Advances: Vol 9, No 12
Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods: Journal of Applied Physics: Vol 112, No 6
PDF) Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods | Omer Nur - Academia.edu
Interface Trap - an overview | ScienceDirect Topics
Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency | Nanoscale Research Letters | Full Text
Analysis of interface trap states at Schottky diode by using equivalent circuit modeling: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena: Vol 25, No 1
Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET
OXIDE AND INTERFACE TRAPPED CHARGES, OXIDE THICKNESS - ppt video online download
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
Method of evaluating interface traps in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN high electron mobility transistors
Interface Trap - an overview | ScienceDirect Topics
Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods: Journal of Applied Physics: Vol 112, No 6
Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes | Scientific.Net
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in -Ga2O3 Field-Effect Transistors
Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode | SpringerLink
Reduction of interface traps between poly-Si and SiO2 layers through the dielectric recovery effect during delayed pulse bias st
Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al 2 O 3 - RSC Advances (RSC Publishing) DOI:10.1039/C6RA27190A