![Two junction diodes one of germanium (Ge) and other of silicon (Si) are connected as shown in figure to a battery of emf 12 v and a load resistance 10 k Ω . Two junction diodes one of germanium (Ge) and other of silicon (Si) are connected as shown in figure to a battery of emf 12 v and a load resistance 10 k Ω .](https://dwes9vv9u0550.cloudfront.net/images/2250528/bb716bdb-4e6c-4be0-ad14-193692f8fcba.jpg)
Two junction diodes one of germanium (Ge) and other of silicon (Si) are connected as shown in figure to a battery of emf 12 v and a load resistance 10 k Ω .
![Ge and Si diodes start conducting at \\[0.3\\,{\\text{V}}\\] and \\[0.7\\,{\\text{V}}\\] respectively. In the following figure if Ge diode connection are reversed, the value of \\[{{\\text{V}}_{\\text{o}}}\\] changes by: (assume that the Ge diode Ge and Si diodes start conducting at \\[0.3\\,{\\text{V}}\\] and \\[0.7\\,{\\text{V}}\\] respectively. In the following figure if Ge diode connection are reversed, the value of \\[{{\\text{V}}_{\\text{o}}}\\] changes by: (assume that the Ge diode](https://www.vedantu.com/question-sets/c548906a-049a-4d47-bae6-2d2a9d0f53de5574612316842034532.png)
Ge and Si diodes start conducting at \\[0.3\\,{\\text{V}}\\] and \\[0.7\\,{\\text{V}}\\] respectively. In the following figure if Ge diode connection are reversed, the value of \\[{{\\text{V}}_{\\text{o}}}\\] changes by: (assume that the Ge diode
![In the given circuit a silicon diode with knee voltage 0.7V is forward biased with a battery of e.m.f 8V. The current in the circuit is 40 mA. Find th - Sarthaks In the given circuit a silicon diode with knee voltage 0.7V is forward biased with a battery of e.m.f 8V. The current in the circuit is 40 mA. Find th - Sarthaks](https://learnqa.s3.ap-south-1.amazonaws.com/images/7327071091617551351678383910.png)
In the given circuit a silicon diode with knee voltage 0.7V is forward biased with a battery of e.m.f 8V. The current in the circuit is 40 mA. Find th - Sarthaks
A voltage drop across a diode is 0.7V on load. Is this true that on no load voltage drop is 0.4V? - Quora
![A diode made of silicon has a barrier potential of `0.7 V` and a current of `20 mA` passes through t - YouTube A diode made of silicon has a barrier potential of `0.7 V` and a current of `20 mA` passes through t - YouTube](https://i.ytimg.com/vi/tVSDiM5bPaM/maxresdefault.jpg)
A diode made of silicon has a barrier potential of `0.7 V` and a current of `20 mA` passes through t - YouTube
![Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of V 0 changes by Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of V 0 changes by](https://haygot.s3.amazonaws.com/questions/1118972_d6e63d376bf941beaad6e371540d2310.png)
Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of V 0 changes by
![diodes - Why is the Vbe threshold of a Si NPN transistor 0.7V and not -0.7V? - Electrical Engineering Stack Exchange diodes - Why is the Vbe threshold of a Si NPN transistor 0.7V and not -0.7V? - Electrical Engineering Stack Exchange](https://i.stack.imgur.com/Ylzdu.png)
diodes - Why is the Vbe threshold of a Si NPN transistor 0.7V and not -0.7V? - Electrical Engineering Stack Exchange
![Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that](https://toppr-doubts-media.s3.amazonaws.com/images/4803840/fc0431b4-7f50-4450-b34d-2d62b955f96b.jpg)
Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that
![Assume that the silicon diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I–V characteristics. Also assume that the Assume that the silicon diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I–V characteristics. Also assume that the](https://www.zigya.com/application/zrc/images/qvar/PHEN12060306.png)