![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0004.gif)
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
![Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation](http://www.jos.ac.cn/fileBDTXB/journal/article/bdtxb/2022/1/21050015-1_mini.jpg)
Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation
![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0005.gif)
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
![a) Swept I-V curves and (b) XRD spectra of Ni/GeOx/ nc-TiO 2 /TaON/TaN... | Download Scientific Diagram a) Swept I-V curves and (b) XRD spectra of Ni/GeOx/ nc-TiO 2 /TaON/TaN... | Download Scientific Diagram](https://www.researchgate.net/publication/252056870/figure/fig2/AS:667832853479431@1536235168437/a-Swept-I-V-curves-and-b-XRD-spectra-of-Ni-GeOx-nc-TiO-2-TaON-TaN-RRAM-devices-with.png)
a) Swept I-V curves and (b) XRD spectra of Ni/GeOx/ nc-TiO 2 /TaON/TaN... | Download Scientific Diagram
![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0003.gif)