![Coatings | Free Full-Text | Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures | HTML Coatings | Free Full-Text | Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures | HTML](https://www.mdpi.com/coatings/coatings-12-00777/article_deploy/html/images/coatings-12-00777-g001.png)
Coatings | Free Full-Text | Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures | HTML
![Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires: Journal of Applied Physics: Vol 108, No 3 Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires: Journal of Applied Physics: Vol 108, No 3](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.3446845&id=images/medium/1.3446845.figures.f1.gif)
Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires: Journal of Applied Physics: Vol 108, No 3
Current-Voltage (I-V) characteristics at room temperature of (a) Ti/Au... | Download Scientific Diagram
![Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs) | HTML Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs) | HTML](https://www.mdpi.com/electronics/electronics-08-00575/article_deploy/html/images/electronics-08-00575-g001-550.jpg)
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs) | HTML
![we want to make a schottky diode on one surface of an n-type semiconductor, and an ohmic contact on - Brainly.com we want to make a schottky diode on one surface of an n-type semiconductor, and an ohmic contact on - Brainly.com](https://us-static.z-dn.net/files/d07/e9e0378cd78f374d8df595666a65adf0.jpg)
we want to make a schottky diode on one surface of an n-type semiconductor, and an ohmic contact on - Brainly.com
![SSPD_Chapter 3_Section 3.4.Schottky Diode and Section 3.5. Ohmic Contact. - Solid State Physics and Devices-the Harbinger of Third Wave of Civilization - OpenStax CNX SSPD_Chapter 3_Section 3.4.Schottky Diode and Section 3.5. Ohmic Contact. - Solid State Physics and Devices-the Harbinger of Third Wave of Civilization - OpenStax CNX](https://cnx.org/resources/b653d183486ff5014f9cc0a3d24ee1eda5c7459e/graphics2.png)
SSPD_Chapter 3_Section 3.4.Schottky Diode and Section 3.5. Ohmic Contact. - Solid State Physics and Devices-the Harbinger of Third Wave of Civilization - OpenStax CNX
![J-V characteristics of (a) Au/p-Si/Au and Ag/n-Si/Ag co-planar Ohmic... | Download Scientific Diagram J-V characteristics of (a) Au/p-Si/Au and Ag/n-Si/Ag co-planar Ohmic... | Download Scientific Diagram](https://www.researchgate.net/publication/333393537/figure/fig2/AS:762999522467840@1558924670879/J-V-characteristics-of-a-Au-p-Si-Au-and-Ag-n-Si-Ag-co-planar-Ohmic-contacts-an-inset.png)
J-V characteristics of (a) Au/p-Si/Au and Ag/n-Si/Ag co-planar Ohmic... | Download Scientific Diagram
Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode
![Applied Sciences | Free Full-Text | Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array | HTML Applied Sciences | Free Full-Text | Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array | HTML](https://www.mdpi.com/applsci/applsci-10-07924/article_deploy/html/images/applsci-10-07924-g001.png)