rautacios Reglabil baricadă 2015 acs nano 9 4611 combinaţie Dreptunghi Martin Luther King Junior
Optimization of growth parameters to obtain epitaxial large area growth of molybdenum disulfide using pulsed laser deposition: AIP Advances: Vol 12, No 6
The epitaxy of 2D materials growth | Nature Communications
Large-Area Epitaxial Monolayer MoS2 | ACS Nano
Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene | ACS Nano
Anomalous enhancement oxidation of few-layer MoS2 and MoS2/h-BN heterostructure | SpringerLink
Large-Area Epitaxial Monolayer MoS2 | ACS Nano
Direct growth of monolayer MoS2 on nanostructured silicon waveguides
Bandgap broadening at grain boundaries in single-layer MoS2 | SpringerLink
Large-Area Epitaxial Monolayer MoS2 | ACS Nano
Large-Area Epitaxial Monolayer MoS2 | ACS Nano
Large-Area Epitaxial Monolayer MoS2. - Abstract - Europe PMC
Large-Area Epitaxial Monolayer MoS2 | ACS Nano
Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics | ACS Nano
Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode | ACS Nano
Monolayer MoS2 epitaxy | SpringerLink
Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality
Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode | ACS Nano